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| EIC1415A-4 ISSUED 08/21/2007 14.40-15.40GHz 4-Watt Internally Matched Power FET Excelics EIC1415A-4 GATE DRAIN FEATURES * * * * * * * * 14.40- 15.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -43 dBc IM3 at Po = 25.0 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. .060 MIN. .650.008 .512 .319 YYWW SN .094 .382 .022 .045 .004 .070 .008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ 1100mA Gain at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ 1100mA Gain Flatness f = 14.40-15.40GHz VDS = 10 V, IDSQ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 1100mA f = 14.40-15.40GHz Drain Current at 1dB Compression f = 14.40-15.40GHz Caution! ESD sensitive device. MIN 35.5 4.5 TYP 36.0 5.0 MAX UNITS dBm dB 0.6 25 1100 -40 -43 2080 -2.5 5.5 2880 -4.0 6.0 o dB % 1400 mA dBc mA V C/W Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 15.40GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOLS PARAMETERS ABSOLUTE 15V -5V 48mA -7.2mA 35.5dBm 175C -65C to +175C 25W CONTINUOUS 10V -4V 14.4mA -2.4mA @ 3dB Compression 175C -65C to +175C 25W Vds Vgs Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised September 2007 |
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